FZ250R65KE3NPSA1 Description
The FZ250R65KE3NPSA1 is a highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.
FZ250R65KE3NPSA1 Features
Electrical Features
Low VCEsat
Mechanical Features
Package with enhanced insulation of 10.4kV AC 10s
High creepage and clearance distances
Package with CTI > 600
AlSiC base plate for increased thermal cycling capability
Extended storage temperature down to Tstg = -55°C
FZ250R65KE3NPSA1 Applications
