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FP50R06W2E3B11BOMA1

FP50R06W2E3B11BOMA1

FP50R06W2E3B11BOMA1

Infineon Technologies

FP50R06W2E3B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP50R06W2E3B11BOMA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 23
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 175W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 65A
Turn On Time45 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 355 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 3.1nF @ 25V
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:256 items

Pricing & Ordering

QuantityUnit PriceExt. Price
15$47.52467$712.87005

FP50R06W2E3B11BOMA1 Product Details

FP50R06W2E3B11BOMA1 Description


FP50R06W2E3B11BOMA1 is a 600v EasyPIM?2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode. The FP50R06W2E3B11BOMA1 can be applied in Automotive, Infotainment & cluster, Industrial, Appliances, Personal electronics, and Gaming due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FP50R06W2E3B11BOMA1 is in the tray package with 175W Power dissipation.



FP50R06W2E3B11BOMA1 Features


Collector-emitter voltage Tvj = 25°C: 600v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 65A

Repetitive peak collector current Tp = 1 ms: 100A

Total power dissipation Tc = 25°C: 175W

Gate-emitter peak voltage: ±20V



FP50R06W2E3B11BOMA1 Applications


Automotive

Infotainment & cluster

Industrial

Appliances

Personal electronics

Gaming


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