FP75R12KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FP75R12KE3BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
24
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C TJ
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
35
ECCN Code
EAR99
Max Power Dissipation
350W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
35
JESD-30 Code
R-XUFM-X35
Number of Elements
7
Polarity
NPN
Configuration
Single
Power Dissipation
350W
Case Connection
ISOLATED
Power - Max
355W
Forward Current
75A
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
105A
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.15V
Turn On Time
330 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 75A
Turn Off Time-Nom (toff)
610 ns
IGBT Type
NPT
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
5.3nF @ 25V
Height
17mm
Length
122mm
Width
62mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
In-Stock:71 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$36.444000
$36.444
10
$34.381132
$343.81132
100
$32.435030
$3243.503
500
$30.599085
$15299.5425
1000
$28.867061
$28867.061
FP75R12KE3BOSA1 Product Details
FP75R12KE3BOSA1 Description
FP75R12KE3BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP75R12KE3BOSA1 operates between -40°C~125°C TJ, and its Current - Collector Cutoff (Max) is 105A. The FP75R12KE3BOSA1 has 35 pins and it is available in Module packaging way. FP75R12KE3BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FP75R12KE3BOSA1 Features
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 5.3nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Collector Emitter Breakdown Voltage: 1.2kV
FP75R12KE3BOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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