FS800R07A2E3B31BOSA1 Description
FS800R07A2E3B31BOSA1 is a HybridPACK?2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC. The transistor FS800R07A2E3B31BOSA1 can be applied in Automotive Applications, Hybrid Electrical Vehicles (H) EVs, Commercial Agriculture Vehicles, and Motor Drive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS800R07A2E3B31BOSA1 is in the tray package with 1550W Power dissipation.
FS800R07A2E3B31BOSA1 Features
Increased blocking voltage capability to 650V
Extended Operation Temperature Tvj op
High Current Density
Low Inductive Design
Low Switching Losses
Low VCcsat
Tvj op= 150°C
Tvj op= 175°C
Trench IGBT 3
Vcesat with positive Temperature Coefficient
FS800R07A2E3B31BOSA1 Applications
Automotive Applications
Hybrid Electrical Vehicles (H)EV
Commercial Agriculture Vehicles
Motor Drives
