FS75R07W2E3B11ABOMA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
FS75R07W2E3B11ABOMA1 Applications
·Hybrid Electrical Vehicles(H)EV
·Air Conditioning
·Motor Drives
Electrical Features
·Increased blocking voltage capabilityto650V
·Low Switching Losses
·Low VCEsat
·Trench IGBT 3
FS75R07W2E3B11ABOMA1 Features
·Al2O3 Substrate with Low Thermal Resistance
·High Power Density
Integrated NTC temperature sensor Compact design
·PressFIT Contact Technology
·RoHS compliant
·Rugged mounting due to integrated mounting clamps
