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FS150R12KT4BOSA1

FS150R12KT4BOSA1

FS150R12KT4BOSA1

Infineon Technologies

FS150R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS150R12KT4BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C TJ
Published 2002
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count35
JESD-30 Code R-XUFM-X35
Qualification StatusNot Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 750W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 150A
Power Dissipation-Max (Abs) 750W
Turn On Time165 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Turn Off Time-Nom (toff) 605 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.1 V
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:72 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$64.961600$64.9616
10$61.284528$612.84528
100$57.815593$5781.5593
500$54.543012$27271.506
1000$51.455672$51455.672

FS150R12KT4BOSA1 Product Details

FS150R12KT4BOSA1 Description


FS150R12KT4BOSA1 developed by Infineon Technologies is a type of EconoPACK?3 module PressFIT with trench/fieldstop IGBT4 and emitter controlled4 diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.



FS150R12KT4BOSA1 Features


Energy saving

Easy installation and maintenance

Stable heat dissipation

High efficiency diode



FS150R12KT4BOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles

New energy equipment


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