FS100R12KT3BOSA1 Description
FS100R12KT3BOSA1 developed by Infineon Technologies belongs to the family of EconoPACK?3 with fast trench/fieldstop IGBT3 and emitter controlled high-efficiency diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
FS100R12KT3BOSA1 Features
Energy saving
Easy installation and maintenance
Stable heat dissipation
High efficiency diode
FS100R12KT3BOSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
