FF300R12KT3PEHOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FF300R12KT3PEHOSA1 FEATURES
Low Noise:20uVms(10Hz to 100kHz) Output Current:500mA
Low Quiescent Current:30uA
Wide Input Voltage Range:1.8Vto20V Low Dropout Voltaqe:300mV
Very Low Shutdown Current:<1uA No Protection Diodes Needed
Fixed Output Voltages: 1.5V1.8V2.5V.3V3.3V5V Adjustable Output from 1.22Vto20V Stable with 3.3uF Output Capacitor
Stable with Aluminum.Tantalum or Ceramic Capacitors
Reverse Battery Protection No Reverse Current
Overcurrent and Overtemperature Protected8-Lead SO and 12-Lead(4mmx3mm)DFN Packages
FF300R12KT3PEHOSA1 APPLICATIONS
Cellular Phones
Battery-Powered Systems
Noise-SensitiveInstrumentation Systems
