FF450R12ME4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF450R12ME4BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2013
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
11
JESD-30 Code
R-XUFM-X11
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
2250W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
675A
Turn On Time
290 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 450A
Turn Off Time-Nom (toff)
740 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
28nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:71 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$56.393280
$56.39328
10
$53.201208
$532.01208
100
$50.189818
$5018.9818
500
$47.348885
$23674.4425
1000
$44.668760
$44668.76
FF450R12ME4BOSA1 Product Details
FF450R12ME4BOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FF450R12ME4BOSA1 Applications
Motor Drives
·Servo Drives
·UPS Systems
Wind Turbines
FF450R12ME4BOSA1 Features
Electrical Features
·Low VCEsat
·Tvjp=150℃
Mechanical Features
·Standard Housing
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