FP75R12KT3BOSA1 Description
FP75R12KT3BOSA1 is a 1200v IGBT-module. The FP75R12KT3BOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Appliances, Personal electronics, and PC & notebook applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP75R12KT3BOSA1 is in the tray package with 355W Power dissipations.
FP75R12KT3BOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C : 105A
Repetitive peak collector current Tp = 1 ms: 150A
Total power dissipation Tc = 25°C: 355W
Gate-emitter peak voltage: ±20V
FP75R12KT3BOSA1 Applications
Communications equipment
Datacom module
Industrial
Appliances
Personal electronics
PC & notebooks
