FF600R12ME4CBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF600R12ME4CBOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
11
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2002
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
2
Configuration
Half Bridge
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
4050W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
1.06kA
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
1060A
Turn On Time
300 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 600A
Turn Off Time-Nom (toff)
710 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
37nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:60 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$240.60000
$240.6
FF600R12ME4CBOSA1 Product Details
FF600R12ME4CBOSA1 Description
FF600R12ME4CBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FF600R12ME4CBOSA1 operates between -40°C~125°C TJ, and its Current - Collector Cutoff (Max) is 1060A. The FF600R12ME4CBOSA1 has 11 pins and it is available in Module packaging way. FF600R12ME4CBOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FF600R12ME4CBOSA1 Features
Operating Temperature: -40°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max): 1200V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Transistor Application: POWER CONTROL
FF600R12ME4CBOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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