FP15R12W1T7B3BOMA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
FP15R12W1T7B3BOMA1 Features
? Electrical features
- TRENCHSTOPTM IGBT7
- Low VCEsat
- Overload operation up to 175°C
? Mechanical features
- 2.5 kV AC 1 min insulation
- High power density
- Solder contact technology
- Compact design
- Al2O3
substrate with low thermal resistance
FP15R12W1T7B3BOMA1 Applications
? Air conditioning
? Auxiliary inverters
? Motor drives
