FP15R12W1T7B11BOMA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FP15R12W1T7B11BOMA1 Features
? Electrical features
- TRENCHSTOPTM IGBT7
- Overload operation up to 175°C
- Low VCEsat
? Mechanical features
- PressFIT contact technology
- 2.5 kV AC 1 min insulation
- Al2O3
substrate with low thermal resistance
- Compact design
- High power density
FP15R12W1T7B11BOMA1 Applications
? Auxiliary inverters
? Motor drives
? Air conditioning
