FP10R12W1T4B11BOMA1 Description
FP10R12W1T4B11BOMA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP10R12W1T4B11BOMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
FP10R12W1T4B11BOMA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
FP10R12W1T4B11BOMA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
