BSM100GB120DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM100GB120DLCHOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Qualification Status
Not Qualified
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Power - Max
830W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
100A
Turn On Time
190 ns
Turn Off Time-Nom (toff)
650 ns
NTC Thermistor
Yes
RoHS Status
ROHS3 Compliant
In-Stock:76 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$206.541848
$206.541848
10
$199.750336
$1997.50336
25
$198.361804
$4959.0451
50
$196.982923
$9849.14615
100
$192.931365
$19293.1365
500
$179.137757
$89568.8785
BSM100GB120DLCHOSA1 Product Details
BSM100GB120DLCHOSA1 Description
BSM100GB120DLCHOSA1 is a single IGBT with a breakdown voltage of 1200V from Infineon Technologies. BSM100GB120DLCHOSA1 operates between -40°C~125°C, and its Current - Collector (Ic) (Max) is 100A. The BSM100GB120DLCHOSA1 has 3 pins and it is available in Module packaging way. BSM100GB120DLCHOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
BSM100GB120DLCHOSA1 Features
Voltage - Collector Emitter Breakdown (Max): 1200V
Polarity/Channel Type: N-CHANNEL
Current - Collector (Ic) (Max): 100A
Operating Temperature: -40°C~125°C
BSM100GB120DLCHOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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