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BSM10GP120BOSA1

BSM10GP120BOSA1

BSM10GP120BOSA1

Infineon Technologies

BSM10GP120BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM10GP120BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~125°C
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count24
JESD-30 Code R-XUFM-X24
Qualification StatusNot Qualified
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 100W
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 500μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 20A
Turn On Time95 ns
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 10A
Turn Off Time-Nom (toff) 345 ns
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 600pF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:99 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$78.09200$780.92

BSM10GP120BOSA1 Product Details

BSM10GP120BOSA1 Description

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

BSM10GP120BOSA1 applications

? Main and auxiliary inverters

? PFC

? DC-DC

? PTC heater

BSM10GP120BOSA1 Features

? 600 to 1200 V up to 160 A

? SMD and through-hole packages

? AEC-Q101 qualified

? Thorough final test routine implemented with

dynamic testing


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