FP100R07N3E4BOSA1 Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.
FP100R07N3E4BOSA1 Applications
·Motor Drives
FP100R07N3E4BOSA1 Features
·Increased blocking voltage capability to 650V
·High Short Circuit Capability,Self Limiting Short Circuit Current
·Trench IGBT 4·Top=150°℃
·VCEsat with positive Temperature Coefficient
Mechanical Features
·Integrated NTC temperature sensor·Copper Base Plate
·Solder Contact Technology·Standard Housing
