DF80R12W2H3FB11BPSA1 Description
FF200R12KE3HOSA1 IGBT module developed by Infineon Technologies is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.
DF80R12W2H3FB11BPSA1 Features
Low switching losses
Al2O3 substrate with low thermal resistance
Compact design
CoolSiC(TM) Schottky diode gen 5
DF80R12W2H3FB11BPSA1 Applications
Solar applications
