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FS200R07N3E4RB11BOSA1

FS200R07N3E4RB11BOSA1

FS200R07N3E4RB11BOSA1

Infineon Technologies

FS200R07N3E4RB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS200R07N3E4RB11BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 35
ECCN Code EAR99
Additional FeatureUL APPROVED
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X35
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 200A
Turn On Time210 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 200A
Turn Off Time-Nom (toff) 450 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:74 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$161.58700$1615.87

FS200R07N3E4RB11BOSA1 Product Details

FS200R07N3E4RB11BOSA1 Description


FS200R07N3E4RB11BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 600V from Infineon Technologies. FS200R07N3E4RB11BOSA1 operates between -40°C~150°C TJ, and its Current - Collector Cutoff (Max) is 200A. The FS200R07N3E4RB11BOSA1 has 3 pins and it is available in Module packaging way. FS200R07N3E4RB11BOSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.



FS200R07N3E4RB11BOSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A

  • Input Capacitance (Cies) @ Vce: 13nF @ 25V

  • Voltage - Collector Emitter Breakdown (Max): 650V

  • Turn Off Time-Nom (toff): 450 ns

  • JESD-30 Code: R-XUFM-X35



FS200R07N3E4RB11BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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