FF650R17IE4DPB2BOSA1 Description
The FF650R17IE4DPB2BOSA1 is a PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die.
The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module. Normal electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc.
FF650R17IE4DPB2BOSA1 Features
Electrical Features
Tvjop=150°C
VCEsat with positive temperature coefficient
Enlarged diode for regenerative operation
High short-circuit capability
High surge current capability
High current density
Mechanical Features
RoHS compliant
Pre-applied Thermal Interface Material
High creepage and clearance distances
High power and thermal cycling capability
4 kV AC 1min insulation
Package with CTI>400
FF650R17IE4DPB2BOSA1 Applications
Traction drives
Wind turbines
Industrial motors
Automotive
Motor controllers
