FF600R17KE3B2NOSA1 Description
The FF600R17KE3B2NOSA1 is a 1700V IHM 130mm Dual IGBT Module with IGBT3, enlarged diode and AlSiC base-plate. IGBT, also known as an insulated-gate bipolar transistor, is a type of power semiconductor die. An IGBT power module is created by physically assembling and enclosing many IGBT power semiconductor dies.
FF600R17KE3B2NOSA1 Features
High power density for compact inverter designs
Standardized housing
High reliability and robust module construction
Enlarged Diode for regenerative operation
FF600R17KE3B2NOSA1 Applications
Industry
Motor control and drives
Power converter and inverter for wind turbines
Traction
Commercial, construction and agricultural vehicles (CAV)
