FF600R12ME4B72BOSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
FF600R12ME4B72BOSA1 Applications
·High power converters
·Motor drives Servo drives
·UPS systems
·Wind turbines
FF600R12ME4B72BOSA1 Features
·Low VCEsat·Tvjop=150℃
·VCEsat with positive temperature coefficient
Mechanical Features
·High power density
·lsolated base plate
·Standard housing
