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FP10R12W1T4B3BOMA1

  • FP10R12W1T4B3BOMA1 - FP10R12W1T4B3BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • FP10R12W1T4B3BOMA1 - FP10R12W1T4B3BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

FP10R12W1T4B3BOMA1

FP10R12W1T4B3BOMA1

Infineon Technologies

FP10R12W1T4B3BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FP10R12W1T4B3BOMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 21
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X21
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 105W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 20A
Turn On Time108 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
Turn Off Time-Nom (toff) 500 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 600pF @ 25V
RoHS StatusRoHS Compliant
In-Stock:200 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$20.636240$20.63624
10$19.468151$194.68151
100$18.366180$1836.618
500$17.326585$8663.2925
1000$16.345835$16345.835

FP10R12W1T4B3BOMA1 Product Details

FP10R12W1T4B3BOMA1 Description


The FP10R12W1T4B3BOMA1 is an EasyPIM? module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC.


FP10R12W1T4B3BOMA1 Features


  • Low Switching Losses

  • Trench IGBT 4

  • Vcesat with positive Temperature Coefficient

  • Low VCEsat

  • Al2O3 Substrate with Low Thermal Resistance

  • Compact design

  • Solder Contact Technology

  • Rugged mounting due to integrated mounting clamps



FP10R12W1T4B3BOMA1 Applications


  • Auxiliary Inverters

  • Air Conditioning

  • Motor Drives


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