F3L150R12W2H3B11BPSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
F3L150R12W2H3B11BPSA1 Features
Typische Anwendungen
·3-Level-Applikationen
·Solar Anwendungen
Elektrische Eigenschaften
·High Speed IGBT H3
·Niedrige Schaltverluste
·Tyjop =150℃
Mechanische Eigenschaften
·PressFIT Verbindungstechnik·RoHS konform
F3L150R12W2H3B11BPSA1 Applications
·3-Level-Applications
·Solar Applications
