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FF1200R17KP4B2NOSA2

  • FF1200R17KP4B2NOSA2 - FF1200R17KP4B2NOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • FF1200R17KP4B2NOSA2 - FF1200R17KP4B2NOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

FF1200R17KP4B2NOSA2

FF1200R17KP4B2NOSA2

Infineon Technologies

FF1200R17KP4B2NOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF1200R17KP4B2NOSA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Surface MountNO
Transistor Element Material SILICON
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X10
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn On Time1060 ns
Collector Current-Max (IC) 1700A
Turn Off Time-Nom (toff) 2380 ns
Collector-Emitter Voltage-Max 1700V
RoHS StatusROHS3 Compliant
In-Stock:41 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$856.060400$856.0604
10$807.604151$8076.04151
100$761.890708$76189.0708
500$718.764819$359382.4095
1000$678.080018$678080.018

FF1200R17KP4B2NOSA2 Product Details

FF1200R17KP4B2NOSA2 Description


Trench/Feldstopp IGBT4 and Emitter Controlled 3 Diode in IHM-A Modul



FF1200R17KP4B2NOSA2 Features


  • Additional operating temperature Tvjop

  • VcEsat Low

  • TVjop=150°C

  • An expanded diode for regeneration



FF1200R17KP4B2NOSA2 Applications


  • High-powered converters

  • Converters for medium voltage

  • Drives of motors

  • Traction motors

  • Wind generators


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