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FF600R12KE4BOSA1

FF600R12KE4BOSA1

FF600R12KE4BOSA1

Infineon Technologies

FF600R12KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF600R12KE4BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Operating Temperature-40°C~150°C
Published 2002
Series C
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional FeatureUL APPROVED
Terminal Position UPPER
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 600A
Turn On Time232 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 600A
Turn Off Time-Nom (toff) 630 ns
IGBT Type Trench Field Stop
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 38nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:55 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$183.64000$183.64
10$175.88100$1758.81

FF600R12KE4BOSA1 Product Details

FF600R12KE4BOSA1 Description


FF600R12KE4BOSA1 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.



FF600R12KE4BOSA1 Features


Energy saving

Easy installation and maintenance

Stable heat dissipation

Low switching losses

Unbeatable robustness



FF600R12KE4BOSA1 Applications


High-power converters

Motor drives

UPS systems

Wind turbines


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