FF150R12MS4GBOSA1 Description
FF150R12MS4GBOSA1 is a 1200v IGBT-Modules. The FF150R12MS4GBOSA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Enterprise systems, Enterprise machines, Personal electronics, and Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF150R12MS4GBOSA1 is in the tray package with 1250W Power dissipation.
FP15R06YE3B4BOMA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 225A
Repetitive peak collector current Tp = 1 ms: 300A
Total power dissipation Tc = 25°C: 1250W
Gate-emitter peak voltage: ±20V
FF150R12MS4GBOSA1 Applications
Automotive
Advanced driver assistance systems (ADAS)
Enterprise systems
Enterprise machine
Personal electronics
Home theater & entertainment
