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DF100R07W1H5FPB53BPSA2

  • DF100R07W1H5FPB53BPSA2 - DF100R07W1H5FPB53BPSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • DF100R07W1H5FPB53BPSA2 - DF100R07W1H5FPB53BPSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

DF100R07W1H5FPB53BPSA2

DF100R07W1H5FPB53BPSA2

Infineon Technologies

DF100R07W1H5FPB53BPSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

DF100R07W1H5FPB53BPSA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Series EasyPACK™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 26
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-XUFM-X26
Number of Elements 2
Configuration 2 Independent
Case Connection ISOLATED
Power - Max 20mW
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 40μA
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 40A
Turn On Time17 ns
Vce(on) (Max) @ Vge, Ic 1.55V @ 15V, 25A
Turn Off Time-Nom (toff) 40 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:171 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$62.325938$62.325938
10$58.798055$587.98055
100$55.469863$5546.9863
500$52.330060$26165.03
1000$49.367981$49367.981

DF100R07W1H5FPB53BPSA2 Product Details

DF100R07W1H5FPB53BPSA2 Features

CoolSiC (TM) Schottky diode gen 5

Increased blocking voltage capability up to 650V

Low inductive design

Low switching losses



DF100R07W1H5FPB53BPSA2 Applications

Solar applications


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