FF200R12KE3B2HOSA1 Description
FF200R12KE3B2HOSA1 is a 1200v IGBT-modules. The FF200R12KE3B2HOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Enterprise systems, Enterprise projectors, Personal electronics, and Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF200R12KE3B2HOSA1 is in the tray package with 1050W Power dissipation.
FF200R12KE3B2HOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 295A
Repetitive peak collector current Tp = 1 ms: 400A
Total power dissipation Tc = 25°C: 1050W
Gate-emitter peak voltage: ±20V
FF200R12KE3B2HOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
