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BSM150GB170DLCE3256HDLA1

BSM150GB170DLCE3256HDLA1

BSM150GB170DLCE3256HDLA1

Infineon Technologies

BSM150GB170DLCE3256HDLA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM150GB170DLCE3256HDLA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature-40°C~125°C
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 1250W
Input Standard
Current - Collector Cutoff (Max) 300μA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 300A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 150A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 10nF @ 25V
In-Stock:95 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$120.656441$120.656441
10$113.826831$1138.26831
100$107.383803$10738.3803
500$101.305474$50652.737
1000$95.571202$95571.202

BSM150GB170DLCE3256HDLA1 Product Details

BSM150GB170DLCE3256HDLA1 Description

BSM150GB170DLCE3256HDLA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes BSM150GB170DLCE3256HDLA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

BSM150GB170DLCE3256HDLA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

BSM150GB170DLCE3256HDLA1 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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