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FPF2C8P2NL07A

FPF2C8P2NL07A

FPF2C8P2NL07A

ON Semiconductor

FPF2C8P2NL07A datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

SOT-23

FPF2C8P2NL07A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Chassis Mount
Package / Case F2 Module
Weight 45g
Operating Temperature-40°C~150°C TJ
Published 2014
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code8542.39.00.01
Max Power Dissipation135W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase
Power - Max 135W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 30A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage650V
Isolation Voltage2.5kV
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
IGBT Type Field Stop
NTC ThermistorYes
RoHS StatusROHS3 Compliant
In-Stock:137 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$89.969489$89.969489
10$84.876876$848.76876
100$80.072525$8007.2525
500$75.540118$37770.059
1000$71.264262$71264.262

FPF2C8P2NL07A Product Details

FPF2C8P2NL07A Description

FPF2C8P2NL07A transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FPF2C8P2NL07A MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FPF2C8P2NL07A Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FPF2C8P2NL07A Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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