FP50R12N2T4B16BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FP50R12N2T4B16BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
In-Stock:125 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$205.035285
$205.035285
10
$198.293312
$1982.93312
25
$196.914908
$4922.8727
50
$195.546085
$9777.30425
100
$191.524079
$19152.4079
500
$177.831086
$88915.543
FP50R12N2T4B16BOSA1 Product Details
FP50R12N2T4B16BOSA1 Description
FP50R12N2T4B16BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FP50R12N2T4B16BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1400A. The FP50R12N2T4B16BOSA1 has 12 pins and it is available in Module packaging way. FP50R12N2T4B16BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FP50R12N2T4B16BOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A
Input Capacitance (Cies) @ Vce: 82nF @ 25V
Voltage - Collector Emitter Breakdown (Max): 1200V
Operating Temperature: -40°C~150°C
Current - Collector Cutoff (Max): 5mA
FP50R12N2T4B16BOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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