DF450R12N2E4PB11BPSA1 Description
The DF450R12N2E4PB11BPSA1 is an IGBT Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
DF450R12N2E4PB11BPSA1 Features
Wide input voltage range, as boosters are included
Reactive power capability is supported Simple assembly due to PressFIT pins (solderable)
Modular solution tailored for most inverter designs
Excellent efficiency and performance
High maximum DC voltages achievable
DF450R12N2E4PB11BPSA1 Applications
