BSC047N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSC047N08NS3GATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 125W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
4800pF @ 40V
Current - Continuous Drain (Id) @ 25°C
18A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
44 ns
Continuous Drain Current (ID)
18A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
80V
Drain-source On Resistance-Max
0.0047Ohm
Pulsed Drain Current-Max (IDM)
400A
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
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BSC047N08NS3GATMA1 Product Details
BSC047N08NS3GATMA1 Description
This BSC047N08NS3GATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
BSC047N08NS3GATMA1 Features
● Ideal for high frequency switching and sync. rec. ● Optimized technology for DC/DC converters ● Excellent gate charge x RDS(on) product (FOM) ● Very low on-resistance RDS(on) ● Superior thermal resistance ● N-channel, normal level ● 100% avalanche tested ● Pb-free plating; RoHS compliant ● Qualified according to JEDEC for target applications ● Halogen-free according to IEC61249-2-21
BSC047N08NS3GATMA1 Applications
● Solar ● Consumer ● Telecom ● Server ● PC power ● DC-DC ● AC-DC ● Adapter ● SMPS ● LED ● Motor control
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