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BSC014N06NSATMA1

BSC014N06NSATMA1

BSC014N06NSATMA1

Infineon Technologies

Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R

SOT-23

BSC014N06NSATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 1997
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 156W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation156W
Case Connection DRAIN
Turn On Delay Time23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.45m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 120μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 30V
Current - Continuous Drain (Id) @ 25°C 30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Rise Time10ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage60V
Drain Current-Max (Abs) (ID) 30A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:1513 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.745824$2.745824
10$2.590400$25.904
100$2.443774$244.3774
500$2.305447$1152.7235
1000$2.174950$2174.95

About BSC014N06NSATMA1

The BSC014N06NSATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSC014N06NSATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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