Name: SI3442DV
Brand: ON Semiconductor
SKU: SI3442DV
Price: 0.14000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	SuperSOT™-6
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.6W Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	60mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	365pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.1A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	8V

SI3442DV Product Details

SI3442DV Description

SI3442DV is a 20v N-Channel Logic Level Enhancement Mode Field Effect Transistor. The onsemi SI3442DV is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is tailored to minimize on-state resistance. The SI3442DV is particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.

SI3442DV Features

4.1 A, 20 V. RDS(ON) = 0.06 ? @ VGS = 4.5 V

RDS(ON) = 0.075 ? @ VGS =2.7 V.

Proprietary SuperSOT?-6 package design using the copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Drain-Source Voltage: 20V