BDP950E6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 85 @ 500mA 1V DC current gain.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 100MHz.The device exhibits a collector-emitter breakdown at 60V.
BDP950E6327HTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 100MHz
BDP950E6327HTSA1 Applications
There are a lot of Infineon Technologies BDP950E6327HTSA1 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
