STGWA80H65FB Description
This STGWA80H65FB is an IGBT developed using an advanced proprietary trench gate and field stop structure. The STGWA80H65FB is part of the new“HB" series of IGB Ts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWA80H65FB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
VCE(sat) = 1.6 V (typ.) @ IC = 80 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
STGWA80H65FB Applications
Photovoltaic inverters
High-frequency converters
Communications equipment
Broadband fixed line access
Enterprise systems
Enterprise machine
Personal electronics
Portable electronics
