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HTNFET-T

HTNFET-T

HTNFET-T

Honeywell Aerospace

N-Channel Bulk 400m Ω @ 100mA, 5V 10V 290pF @ 28V 4.3nC @ 5V 55V 4-SIP

SOT-23

HTNFET-T Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-SIP
Operating Temperature-55°C~225°C TJ
PackagingBulk
Series HTMOS™
Published 2004
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power Dissipation-Max 50W Tj
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 100mA, 5V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 28V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) 10V
RoHS StatusNon-RoHS Compliant
In-Stock:64 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$434.00000$434

HTNFET-T Product Details

HTNFET-T Overview


A device's maximal input capacitance is 290pF @ 28V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V).

HTNFET-T Features


a 55V drain to source voltage (Vdss)


HTNFET-T Applications


There are a lot of Honeywell Aerospace
HTNFET-T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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