IRFP250MPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFP250MPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
75MOhm
Terminal Finish
MATTE TIN OVER NICKEL
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
214W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
214W
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2159pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
123nC @ 10V
Rise Time
43ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Height
21.1mm
Length
16.129mm
Width
5.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3011 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.19000
$2.19
10
$1.98200
$19.82
400
$1.44905
$579.62
800
$1.16895
$935.16
IRFP250MPBF Product Details
IRFP250MPBF Description
IRFP250MPBF belongs to the family of MOSFET designed based on the IR MOSFET? technology that makes use of advanced processing techniques to make extremely low on-resistance per silicon area possible. Moreover, the IR MOSFET? technology achieves fast switching speed and rugged device design. All of these make the IRFP250MPBF be more efficient and reliable and be used in a wide range of applications.
IRFP250MPBF Features
Fast switching speed Simple drive requirements Advanced processing techniques Low on-resistance per silicon area Maximum power consumption of 214 W Available in the TO-247AD package with isolated mounting hole
IRFP250MPBF Applications
Welding equipment Inverter power supply Inverter welding machine High-power power supply
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