Name: STP141NF55
Brand: STMicroelectronics
SKU: STP141NF55
Price: 2.95000 USD
Availability: InStock

new-10%

STP141NF55

Manufacturer part number:STP141NF55

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 40A, 10V ±20V 5300pF @ 25V 142nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP141NF55 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	8mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP141
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	142nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	320A
Avalanche Energy Rating (Eas)	1300 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP141NF55 Product Details

STP141NF55 Description

The STP141NF55 Power MOSFETs were created utilizing STMicroelectronics' proprietary STripFET technology, which is specifically made to reduce gate charge and input capacitance. As a result, the devices can be used as the principal switch in cutting-edge, isolated DC-DC converters for computer and telecom applications as well as applications requiring less gate charge driving.