MJD45H11-1G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.In this part, there is a transition frequency of 40MHz.When collector current reaches its maximum, it can reach 8A volts.
MJD45H11-1G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 40MHz
MJD45H11-1G Applications
There are a lot of ON Semiconductor MJD45H11-1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
