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ZTX658QSTZ

ZTX658QSTZ

ZTX658QSTZ

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR EP3 AM

SOT-23

ZTX658QSTZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Operating Temperature-55°C~200°C TJ
PackagingTape & Box (TB)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 50MHz
RoHS StatusROHS3 Compliant
In-Stock:19349 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About ZTX658QSTZ

The ZTX658QSTZ from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features PWR HI VOLTAGE TRANSISTOR EP3 AM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the ZTX658QSTZ, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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