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FMMT593TC

FMMT593TC

FMMT593TC

Diodes Incorporated

FMMT593TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT593TC Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT593
Number of Elements 1
Voltage 100V
Element ConfigurationSingle
Current 1A
Power Dissipation500mW
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage100V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-300mV
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18400 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.49000$0.49
500$0.4851$242.55
1000$0.4802$480.2
1500$0.4753$712.95
2000$0.4704$940.8
2500$0.4655$1163.75

FMMT593TC Product Details

FMMT593TC Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 50MHz.A maximum collector current of 1A volts can be achieved.

FMMT593TC Features


the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 50MHz

FMMT593TC Applications


There are a lot of Diodes Incorporated FMMT593TC applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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