Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DPLS160-7

DPLS160-7

DPLS160-7

Diodes Incorporated

DPLS160-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DPLS160-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300mW
Gain Bandwidth Product220MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 330mV @ 100mA, 1A
Collector Emitter Breakdown Voltage60V
Transition Frequency 220MHz
Collector Emitter Saturation Voltage-330mV
Max Breakdown Voltage 60V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -5V
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18574 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.079272$0.079272
500$0.058288$29.144
1000$0.048574$48.574
2000$0.044563$89.126
5000$0.041648$208.24
10000$0.038742$387.42
15000$0.037468$562.02
50000$0.036841$1842.05

DPLS160-7 Product Details

DPLS160-7 Overview


In this device, the DC current gain is 200 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -330mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 330mV @ 100mA, 1A.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 220MHz.Input voltage breakdown is available at 60V volts.The maximum collector current is 1A volts.

DPLS160-7 Features


the DC current gain for this device is 200 @ 1mA 5V
a collector emitter saturation voltage of -330mV
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz

DPLS160-7 Applications


There are a lot of Diodes Incorporated DPLS160-7 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News