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DMN65D8LW-7

DMN65D8LW-7

DMN65D8LW-7

Diodes Incorporated

MOSFET N-CH 60V 0.3A SOT323

SOT-23

DMN65D8LW-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Turn On Delay Time2.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V
Rise Time2.8ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.3 ns
Turn-Off Delay Time 12.6 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 60V
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15283 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.052833$0.052833
500$0.038848$19.424
1000$0.032374$32.374
2000$0.029700$59.4
5000$0.027757$138.785
10000$0.025820$258.2
15000$0.024972$374.58
50000$0.024554$1227.7

About DMN65D8LW-7

The DMN65D8LW-7 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 0.3A SOT323.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMN65D8LW-7, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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