Name: DMN65D8LDW-7
Brand: Diodes Incorporated
SKU: DMN65D8LDW-7
Price: 0.39000 USD
Availability: InStock

new-10%

DMN65D8LDW-7

Manufacturer part number:DMN65D8LDW-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 60V 0.18A SOT363

Case Package:SOT-23

Datasheet:DMN65D8LDW-7 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	6Ohm
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN65D8LDW
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	3.3 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	0.87nC @ 10V
Rise Time	3.2ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	180mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.15A
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

DMN65D8LDW-7 Product Details

Description:

The DMN65D8LDW-7 is a MOSFET 2N-CH 60V 0.18A SOT363 from Diodes Inc. It is a low-voltage, low-power, high-speed, low-on-resistance, and low-gate-charge MOSFET. It is designed for use in a wide range of applications, including power management, motor control, and switching applications.

Features:

• Low-voltage operation: 60V
• Low-power consumption: 0.18A
• High-speed switching: up to 1.5MHz
• Low-on-resistance: 0.18Ω
• Low-gate-charge: 0.9nC
• Small package size: SOT363

Applications:

The DMN65D8LDW-7 is suitable for a wide range of applications, including power management, motor control, and switching applications. It is ideal for use in automotive, industrial, and consumer electronics applications. It can also be used in power supplies, DC-DC converters, and other power management applications.