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NVMFD6H840NLT1G

NVMFD6H840NLT1G

NVMFD6H840NLT1G

ON Semiconductor

NVMFD6H840NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NVMFD6H840NLT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 48 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 6.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 96μA
Input Capacitance (Ciss) (Max) @ Vds 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C 14A Ta 74A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 80V
FET Feature Standard
RoHS StatusROHS3 Compliant
In-Stock:2681 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.88000$2.88
500$2.8512$1425.6
1000$2.8224$2822.4
1500$2.7936$4190.4
2000$2.7648$5529.6
2500$2.736$6840

NVMFD6H840NLT1G Product Details

NVMFD6H840NLT1G Description


NVMFD6H840NLT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. It is able to minimize conduction losses based on low RDS (on) and minimize driver losses based on low QG and capacitance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including switching applications, synchronous rectification, and uninterruptible power supplies.



NVMFD6H840NLT1G Features


Low RDS(on)

Low conduction losses

Advanced switching performance

High dv/dt capability

Available in the DFN8 package



NVMFD6H840NLT1G Applications


Switching applications

Synchronous rectification

Uninterruptible power supplies


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