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DMN63D8LDW-7

DMN63D8LDW-7

DMN63D8LDW-7

Diodes Incorporated

DMN63D8LDW-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

SOT-23

DMN63D8LDW-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional FeatureHIGH RELIABILITY
Max Power Dissipation300mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DMN63D8L
Reference Standard AEC-Q101
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation300mW
Turn On Delay Time3.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 870nC @ 10V
Rise Time3.2ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.3 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 4.5Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:23026 items

Pricing & Ordering

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DMN63D8LDW-7 Product Details

DMN63D8LDW-7 Description

This new generation MOSFET has been designed to minimize theon-state resistance (RDS(ON)) yet maintain superior switchingperformance, making it ideal for high efficiency power managementapplications.

DMN63D8LDW-7 Features

· Dual N-Channel MOSFET

· Low On-Resistance

· Low Input Capacitance

· Fast Switching Speed

· Small Surface Mount Package

· ESD Protected Gate

· Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

· Halogen and Antimony Free. “Green” Device (Note 3)

· For automotive applications requiring specific change

control (i.e. parts qualified to AEC-Q100/101/200, PPAP

capable, and manufactured in IATF 16949 certified

facilities), please contact us or your local Diodes

representative.

DMN63D8LDW-7 Applications

· DC-DC Converters

· Power Management Functions

· Battery Operated Systems and Solid-State Relays

· Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.


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