Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDS6990AS

FDS6990AS

FDS6990AS

ON Semiconductor

FDS6990AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDS6990AS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series PowerTrench®, SyncFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 22mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation900mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification StatusNot Qualified
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2W
Turn On Delay Time8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.5A
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Rise Time8ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 7.5mA
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.5A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 1.7 V
Height 1.75mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8239 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FDS6990AS Product Details

FDS6990AS Description


The FDS6990AS is designed to replace one dual SO-8 MOSFET and two Schottky diodes in a synchronous DC:DC power supply. This 30V MOSFET is designed to maximize power conversion efficiency, providing low RDS (on) voltage and low gate charge. Each MOSFET includes integrated Schottky diodes using monolithic SyncFET technology. As a low-end switch in synchronous rectifier, the performance of FDS6990AS is similar to that of FDS6990A in parallel with Schottky diodes.

FDS6990AS Features

7.5A, 30V

RDS(ON) = 22 mΩ @ VGS = 10V

RDS(ON) = 28 mΩ @ VGS = 4.5V

Includes SyncFET Schottky body diode

Low gate charge (10nC typical)

High performance trench technology for extremely low RDS(ON)

High power and current handling capability


FDS6990AS Applications


This product is general usage and suitable for many different applications.

DC/DC Converters

Motor Drives



Get Subscriber

Enter Your Email Address, Get the Latest News